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P4C1048L-100PMB Folha de dados(PDF) 6 Page - Pyramid Semiconductor Corporation |
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P4C1048L-100PMB Folha de dados(HTML) 6 Page - Pyramid Semiconductor Corporation |
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6 / 12 page ![]() P4C1048L Page 6 of 12 Document # SRAM129 REV D -70 Notes: 6. CE and WE are LOW for WRITE cycle. 7. OE is LOW for this WRITE cycle to show t WZ and tOW. 8. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 9. Write Cycle Time is measured from the last valid address to the first transitioning address. AC CHARACTERISTICS - WRITE CYCLE (Over Recommended Operating Temperature & Supply Voltage) WRITE CYCLE NO. 1 ( WE WE WE WE WE CONTROLLED)(6,7) Symbol Parameter Max -100 Max Unit Min Min t WC t CW t AS t WP t AH t DH t WZ t OW Write Cycle Time 70 100 ns Chip Enable Time to End of Write 60 75 ns Address Valid to End of Write 60 75 ns Address Set-up Time 00 ns Write Pulse Width 50 60 ns Address Hold Time 00 ns Data Valid to End of Write 35 45 ns Data Hold Time 0 0 ns Write Enable to Output in High Z 25 35 ns Output Active from End of Write 55 ns t AW t DW -55 Max Min 55 40 40 0 40 0 30 0 20 5 -45 Max Min 45 35 35 0 35 0 25 0 18 5 |
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