P4C1024L

Page 3 of 10

Document # SRAM125 REV C

*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.

The device is continuously enabled for writing, i.e., CE

inputs are 0V and 3V.

**As above but @ f=1 MHz and V

(V

POWER DISSIPATION CHARACTERISTICS VS. SPEED

AC ELECTRICAL CHARACTERISTICS - READ CYCLE

(Over Recommended Operating Temperature & Supply Voltage)

Symbol

Parameter

Test Conditions

Max

Unit

C

IN

C

OUT

Input Capacitance

Output Capacitance

V

V

7

9

pF

pF

Symbol

Parameter

-55

-70

Unit

I

CC

Dynamic Operating Current

Commercial

Industrial

70

85

70

85

15

25

15

25

mA

mA

-55

-70

Temperature

Range

Symbol

Parameter

-55

Min

Max

-70

Min

Max

Unit

t

RC

55

ns

t

AA

Address Access Time

55

70

ns

t

AC

Chip Enable Access

Time

55

70

ns

t

OH

Output Hold from

Address Change

55

ns

t

LZ

Chip Enable to

Output in Low Z

10

10

ns

t

HZ

Chip Disable to

Output in High Z

20

25

ns

t

OE

Output Enable Low

to Data Valid

30

35

ns

t

OLZ

Output Enable Low to

Low Z

55

ns

t

OHZ

Output Enable High

to High Z

20

25

ns

t

PU

Chip Enable to Power

Up Time

00

ns

t

PD

Chip Disable to

Power Down Time

55

70

ns

Read Cycle Time

70

*

**