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P4C164L Folha de dados(PDF) 7 Page - Pyramid Semiconductor Corporation |
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P4C164L Folha de dados(HTML) 7 Page - Pyramid Semiconductor Corporation |
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7 / 11 page ![]() P4C164L Page 7 of 11 Document # SRAM116 REV B DATA RETENTION CHARACTERISTICS Typ.* Max Symbol Parameter Test Condition Min V CC=VCC= Unit 2.0V 3.0V 2.0V 3.0V V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current 1 1 3 3 µA t CDR Chip Deselect to 0 ns Data Retention Time t R † Operation Recovery Time t RC § ns *T A = +25°C §t RC = Read Cycle Time †This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM CE 1 ≥ VCC – 0.2V or CE 2 ≤ 0.2V, VIN ≥ VCC – 0.2V or V IN ≤ 0.2V |
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