M63828DP datasheet(2/6 Pages) MITSUBISHI

2 / 6 page

Feb. 2003

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63828WP/DP

7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85

°C)

VIH

VIL

—

0.8

—

400

200

µA

—

ICEO = 100

µA

II = 500

µA, IC = 350mA

II = 350

µA, IC = 200mA

II = 250

µA, IC = 100mA

VI = 10V

IF = 350mA

VR = 50V

VCE = 2V, IC = 350mA

VCE (sat)

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

—

1000

—

1.2

1.0

0.9

1.4

—

3000

—

1.6

1.3

1.1

1.5

2.0

100

—

450

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

Ω

Measured device

OPEN

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

µs, tr = 6ns, tf = 6ns, ZO = 50Ω

VI = 8V

(2) Input-output conditions : RL = 25

Ω, VO = 10V

(3) Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

ton

50%

toff

INPUT

OUTPUT

Limits

min

typ

max

Unit

Parameter

Symbol

Duty Cycle

WP : no more than 8%

DP : no more than 5%

Duty Cycle

WP : no more thn 30%

DP : no more than 20%

“L” input voltage

“H” input voltage

Collector current

(Current per 1 cir-

cuit when 7 circuits

are coming on si-

multaneously)

Output voltage

≤ 400mA

Collector-emitter breakdown voltage

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

V (BR) CEO

hFE

Collector-emitter saturation voltage

Input current

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25

°C)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25

°C)

Turn-on time

Turn-off time

ton

toff

CL = 15pF (note 1)

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