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TQM7M5004 Folha de dados(PDF) 1 Page - TriQuint Semiconductor

Nome de Peças TQM7M5004
Descrição Electrónicos  GSM/EDGE Multi-mode Power Amplifier Module
PDF  1 Pages
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Fabricante Electrônico  TRIQUINT [TriQuint Semiconductor]
Página de início  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TQM7M5004 Folha de dados(HTML) 1 Page - TriQuint Semiconductor

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TQM 7M5004
Preliminary Data Sheet
GSM/EDGE Multi-mode Power Amplifier Module
Preliminary Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: www.triquint.com
Revision J, April 20, 2006
1
Functional Block Diagram
Features
• Very compact size – 7×7×1.1 mm3.
• High GSM efficiency – GSM 850 50%,
GSM900 52%, DCS 46%, PCS 50%
• High EDGE efficiency – GSM 850 23%, GSM
900 23%, DCS 25%, PCS 25%
• Low Quiescent Current Mode for EDGE
Pout <= 18.5dBm (low-band) & <= 18dBm
(high-band)
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances.
• GPRS class 12.
• CMOS band select and internal closed-loop
power control for GSM Operation.
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/EDGE handsets
• GSM/EDGE wireless cards & data links
Package Style
Package Size: LGA 7 x 7 x 1.1 mm
RF_in_DCS
BS
Tx_En
Vbatt
Mode
Vramp
Vbias
(digital)
RF_in_GSM
RF_out_GSM
RF_out_DCS
Vcc
Ground
Ground
Ground
Top View
Ground
Gnd
Gnd
Logic
Power Control
DCS / PCS in
VRAMP
VBATT
TX_EN
Band Select
GSM 850 / 900 IN
DCS / PCS Out
GSM 850 / 900 Out
VCC
Mode Select
Vbias (digital)
Min
Typ
GSM Pout 34.5
35.5
Efficiency
43
50
Pin
0
2
EDGE Pout 28.5
29
Efficiency
20
23
Gain
29
30.5
Product Description
The TQM 7M5004 is an extremely small (7x7x1.1mm3) multi-mode power amplifier
module for GSM/EDGE applications. This module has been optimized for high EDGE
efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS
efficiency. Two EDGE quiescent current states are provided to minimize current
consumption during backed-off power settings.
The module incorporates two highly-integrated InGaP power amplifier die with a CMOS
controller. The CMOS controller implements a fully integrated closed-loop power
control within the module for GSM Operation. This eliminates the need for any external
couplers, power detectors, current sensing etc., to assure the output power level. The
latter is set directly from the Vramp input from the DAC. The module has Tx enable,
band select, mode (EDGE or GSM) inputs. Module construction is a low-profile over-
molded land-grid array on laminate.
Electrical Specifications (Nominal)
Units
Max
Min
Typ
Max
Min
Typ
Max
34.5
35.5
32.0
33
dBm
45
52
40/45 46/50
%
4
0
2
4
0
2
4
dBm
28.5
29
28
28.5
dBm
20
23
20
25
%
32.0
30.0
31.5
33.0
37/36 38/37 40/39
dB
ACPR
(400KHz)
-62
Parameter
850
-58
-62
-58
-62
-58
dBc
Band
900 Band
DCS / PCS


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