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IXFN320N17T2 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IXFN320N17T2
Descrição Electrónicos  N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN320N17T2 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFN320N17T2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN320N17T2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN320N17T2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1260
eq IXFN320N17T2
N-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 260A@ TC=25℃
· Drain Source Voltage -VDSS= 170V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 5.2mΩ(Max)@VGS= 10V
APPLICATIONS
· Motor Drive, DC-DC Converter, Power Switch
and Solenoid Drive.
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
170
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
260
A
IDM
Drain Current-Single Pulse
800
A
PD
Total Dissipation @TC=25℃
1070
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
Viso
Isolation Voltage t=1min
2500
V~
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.14
℃
/W


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