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3CF1E Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 3CF1E
Descrição Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3CF1E Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  3CF1E Datasheet HTML 1Page - Inchange Semiconductor Company Limited 3CF1E Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
3CF1E
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO=-250V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):-0.8V(Max) @IC=-0.75A
APPLICATIONS
· Low current high speed switching applications
· Low power audio amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-350
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
PD
Collector Power Dissipation TC=25℃
10
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
15
℃
/W


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