IPD50P04P4-13 datasheet(2/5 Pages) BYCHIP

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Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

GS=0

V ID=-250μA

-40

Zero Gate Voltage Drain Current

IDSS

DS=-

40V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

GS=±

20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

DS=V

GS,ID=-250μA

-1.5

-1.9

-3.0

Drain-Source On-State Resistance

RDS(ON)

GS=

-10V, ID=-12A

mΩ

Forward Transconductance

gFS

DS=-5

V,ID=-12A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2960

Output Capacitance

Coss

370

Reverse Transfer Capacitance

Crss

VDS=-20V,VGS=0V,

F=1.0MHz

310

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-20V,ID=-20A

VGS=-10V,RG=3Ω

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-20,ID=-12A,

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

GS=0

V,IS=-20A

-1.2

Diode Forward Current

(Note 2)

-40

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =- 20A

di/dt = -100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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