MCP6541-ESLASHOT datasheet(3/34 Pages) MICROCHIP

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DS21696E-page 3

MCP6541/1R/1U/2/3/4

AC CHARACTERISTICS

Push-Pull Output

High-Level Output Voltage

VOH

VDD−0.2

—

IOUT = -2 mA, VDD = 5V

Low-Level Output Voltage

VOL

——

VSS+0.2

IOUT = 2 mA, VDD = 5V

Short-Circuit Current

ISC

—

-2.5, +1.5

—

VDD = 1.6V (Note 4)

ISC

—±30

—

VDD = 5.5V (Note 4)

Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2,

Step = 200 mV, Overdrive = 100 mV, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3).

Parameters

Sym

Min

Typ

Max

Units

Conditions

Rise Time

—0.85

—

µs

Fall Time

—0.85

—

µs

Propagation Delay (High-to-Low)

tPHL

—4

µs

Propagation Delay (Low-to-High)

tPLH

—4

µs

Propagation Delay Skew

tPDS

—±0.2

—

µs

(Note 1)

Maximum Toggle Frequency

fMAX

—

160

—

kHz

VDD = 1.6V

fMAX

—

120

—

kHz

VDD = 5.5V

Input Noise Voltage

Eni

—

200

—

µVP-P 10 Hz to 100 kHz

Note 1:

Propagation Delay Skew is defined as: tPDS = tPLH - tPHL.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C,VIN+ = VDD/2,

VIN– = VSS, and RL =100 kΩ to VDD/2 (Refer to Figure 1-3).

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the difference

between the input-referred trip points.

VHYST at different temperatures is estimated using VHYST (TA) = VHYST + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.

Input bias current at temperature is not tested for SC-70-5 package.

Limit the output current to Absolute Maximum Rating of 30 mA.

MCP6543 CHIP SELECT (CS) CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = VSS,

and CL= 36 pF (Refer to Figures 1-1 and 1-3).

Parameters

Sym

Min

Typ

Max

Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

VIL

VSS

—0.2 V

CS Input Current, Low

ICSL

—5.0

—

CS = V

CS High Specifications

CS Logic Threshold, High

VIH

0.8 VDD

—VDD

CS Input Current, High

ICSH

—1

—

CS = VDD

CS Input High, VDD Current

IDD

—18

—

CS = VDD

CS Input High, GND Current

ISS

—

–20

—

CS = VDD

Comparator Output Leakage

IO(LEAK)

—1

—

VOUT = VDD, CS = VDD

CS Dynamic Specifications

CS Low to Comparator Output Low

Turn-on Time

tON

—2

CS = 0.2 VDD to VOUT = VDD/2,

VIN– = VDD

CS High to Comparator Output

High Z Turn-off Time

tOFF

—10

—

µs

CS = 0.8 VDD to VOUT = VDD/2,

VIN– = VDD

CS Hysteresis

VCS_HYST

—0.6

—

VDD = 5V

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