is an N-channel enhancement mode MOSFET,which uses the self-aligned

planar process and improved terminal technology,reducing the conduction loss,

enhancing the avalanche energy.

RMP6N65 LD

(IP)(TI)(T2)

RMP6N6

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES

• Low Crss

• Low gate charge

• Fast switching

• Improved ESD capability

• Improved dv/dt capability

• 100% avalanche energy test

• High efficiency swith mode power supplies

APPLICATIONS

• Electronic lamp ballasts

• UPS

RMP6N65IP

6N65

O

RMP6N65LD

RMP6N65TI

RMP6N65T2

TO-251

TO-252

TO-220F

TO-220

6N65

6N65

6N65

5

650

V

2018-09/27

REV:B