TS615IPWT datasheet(4/36 Pages) STMICROELECTRONICS

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TS615

Electrical Characteristics

4/36

3 Electrical Characteristics

Table 3.

CC = ±6V, Rfb=910Ω,Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

DC performance

Vio

Input Offset Voltage

Tamb

1.25

3.5

Tmin. < Tamb < Tmax.

2.1

∆V

Differential Input Offset Voltage

Tamb = 25°C

2.5

Iib+

Positive Input Bias Current

Tamb

630

µA

Tmin. < Tamb < Tmax.

7.8

Iib-

Negative Input Bias Current

Tamb

315

µA

Tmin. < Tamb < Tmax.

3.2

ZIN+

Input(+) Impedance

Ω

ZIN-

Input(-) Impedance

Ω

CIN+

Input(+) Capacitance

1pF

CMR

Common Mode Rejection Ratio

20 log (

∆V

ic/∆Vio)

∆Vic = ±4.5V

Tmin. < Tamb < Tmax.

SVR

Supply Voltage Rejection Ratio

20 log (

∆V

cc/∆Vio)

∆V

cc=±2.5V to ±6V

Tmin. < Tamb < Tmax.

ICC

Total Supply Current per Operator

No load

Dynamic performance and output characteristics

ROL

Open Loop Transimpedance

Vout = 7Vp-p, RL = 25Ω

521

Ω

Tmin. < Tamb. < Tmax.

8.9

-3dB Bandwidth

Small Signal Vout<20mVp

AV = 12dB, RL = 25Ω

MHz

Full Power Bandwidth

Large Signal Vout=3Vp

AV = 12dB, RL = 25Ω

Gain Flatness @ 0.1dB

Small Signal Vout<20mVp

AV = 12dB, RL = 25Ω

7MHz

Rise Time

Vout = 6Vp-p, AV = 12dB, RL

= 25

Ω

10.6

Fall Time

Vout = 6Vp-p, AV = 12dB, RL

= 25

Ω

12.2

Settling Time

Vout = 6Vp-p, AV = 12dB, RL

= 25

Ω

Slew Rate

Vout = 6Vp-p, AV = 12dB, RL

= 25

Ω

330

410

µs

VOH

High Level Output Voltage

RL=25Ω Connected to GND

4.8

5.1

VOL

Low Level Output Voltage

RL=25

Ω Connected to GND

-5.5

-5.2

Iout

Output Sink Current

Vout = -4Vp

-350

-530

Tmin. < Tamb < Tmax.

-440

Output Source Current

Vout = +4Vp

330

420

Tmin. < Tamb < Tmax.

365

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