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IXFN55N50 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IXFN55N50
Descrição Electrónicos  N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN55N50 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFN55N50 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN55N50 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN55N50 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1249
eq IXFN55N50
N-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 55A@ TC=25℃
· Drain Source Voltage -VDSS= 500V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 90mΩ(Max)@VGS= 10V
APPLICATIONS
· DC-DC Converters
· Battery Chargers
· AC and DC Motor Drives
· High Speed Power Switching Application
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
55
A
IDM
Drain Current-Single Pulsed
220
A
PD
Total Dissipation @TC=25℃
625
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Thermal resistance junction to case
0.2
℃
/W
D
G
S
S
SOT-227 package


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