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ISF1236 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISF1236
Descrição Electrónicos  isc Trench P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1236 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Trench P-Channel MOSFET Transistor
ISF1236
www.iscsemi.com
1
FEATURES
· Utilized DH advanced Trench technology
· Drain Current -ID= -30A@ TC=25℃
· Drain Source Voltage -VDSS= -100V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 50mΩ(Max)@VGS= -10V
DESCRIPTION
· Motor control and drive
· Battery management
· Genaral Power Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Continuous Drain Current
-30
A
IDM
Drain Current(Pulse )
-120
A
PD
Total Dissipation @TC=25℃
200
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.625
℃
/W
3
2
1
TO-220C Package


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