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RF3166D
Rev A2 061006
Application Schematic
Evaluation Board Schematic
50
Ωμstrip
50
Ωμstrip
50
Ωμstrip
50
Ωμstrip
DCS IN
BAND SELECT
TX ENABLE
VBATT
VRAMP
GSM IN
DCS OUT
GSM OUT
9
1
3
2
6
5
4
8
7
50
Ω μstrip
50
Ω μstrip
50
Ω μstrip
50
Ω μstrip
BAND SELECT
TX ENABLE
VBATT
VRAMP
22
μF*
Notes:
* The value of VBATT decoupling capacitor depends on the noise level of the phone board. Capacitor type
may be either tantalum or ceramic. Some applications may not require this capacitor.
1. All the PA output measurements are referenced to the PA output pad (pins 8 and 9).
2. The 50
Ω μstrip between the PA output pad and the SMA connector has an approximate insertion loss
of 0.1 dB for EGSM900 and 0.2 dB for DCS1800 bands.
GND
P1
1
CON1
DCS IN
GSM IN
DCS OUT
GSM OUT
VCC
P2
1
CON1
P2-1
9
1
3
2
6
5
4
8
7
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