2
2-4
RF2126
Rev A14 DS070511
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (VCC)
-0.5 to +6.5
VDC
Power Control Voltage (VPC)
-0.5 to +5V
V
DC Supply Current
450 (see Note)
mA
Input RF Power
+20
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +125
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VCC=6.0V, VPC=3.0V, ZLOAD=12Ω,
Pin = 0dBm, Freq=2450MHz, Idle
current=180mA
Frequency Range
1800
2500
MHz
Maximum Output Power
+27.0
dBm
VCC=3.6V, PIN=+19dBm
Maximum Output Power
+29
dBm
VCC=4.8V, PIN=+19dBm
Maximum Output Power
+30.0
+31.0
dBm
VCC=6.0V, PIN=+19dBm
Total Power Added Efficiency
45
%
Maximum output, VCC=3.6V
Total Power Added Efficiency
45
%
Maximum output, VCC=4.8V
Total Power Added Efficiency
45
%
Maximum output, VCC=6.0V
Small-signal Gain
12
dB
Second Harmonic
-55
dBc
See Application Schematic, P
IN =+17 dBm
Third Harmonic
-60
dBc
Input VSWR
1.5:1
With external matching network; see applica-
tion schematic
Two-tone Specification
Average Two-Tone Power
+27
dBm
PEP-3dB
IM3
-24
-25
dBc
POUT=+24dBm for each tone
IM5
-35
dBc
POUT=+24dBm for each tone
IM
7
-55
dBc
POUT=+24dBm for each tone
Power Control
VPC
1.5
3.0
3.5
V
To obtain 180mA idle current
Power Control “OFF”
0.2
0.5
V
Threshold voltage at device input
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
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