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SA1920 Folha de dados(PDF) 8 Page - NXP Semiconductors

Nome de Peças SA1920
Descrição Electrónicos  Dual-band RF front-end
PDF  36 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA1920 Folha de dados(HTML) 8 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
SA1920
Dual-band RF front-end
1999 Mar 02
8
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
VCC = +3.75 V, FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = –3 dBm, TA = +25_C; unless otherwise stated
PARAMETERS
Min
–3
s
TYP
+3
s
Max
UNITS
NOTES
System
RF Input Frequency Range
869
881
960
MHz
IF Frequency
110.52
MHz
LO Frequency
991.52
MHz
Cascaded Power Gain; includes 3dB filter loss
22.5
24
25.5
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
29
35
41
dB
Cascaded Noise Figure; includes 3dB filter loss
2.6
dB
LNA
LNA Gain
17
17.5
18
dB
LNA IIP3
–6
–5
–4
dBm
LNA Noise Figure
1.6
1.7
1.8
dB
Mixer
Mixer Gain
9
9.5
10
dB
Mixer IIP3
4
5
6
dBm
Mixer Noise Figure
9
10
11
dB
Other
Input Impedance, RF Port
50
W
Return Loss at LNA Inputs and Output
–10
dB
1
Return Loss at Mixer Input and Outputs
–10
dB
1
LO leakage at RF Port
–42
dBm
LO Input Power
–5
–3
–1
dBm
Turn ON/OFF Time
100
msec
Low-Band LO Buffer
PARAMETERS
Min
–3
s
TYP.
+3
s
Max
UNITS
NOTES
LO Frequency
991.52
MHz
Differential Output Power
–7
dBm
Differential Output Impedance
100
W
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
W
1
Turn On/Off Time
30
msec



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