Document Number: MC33285

Rev. 5.0, 2/2007

Freescale Semiconductor

Advance Information

* This document contains certain information on a new product.

Specifications and information herein are subject to change without notice.

© Freescale Semiconductor, Inc., 2007. All rights reserved.

Dual High-Side TMOS Driver

A single input controls the 33285 in driving two external high-side N-

Channel TMOS power FETs controlling incandescent or inductive

loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is

possible. The 33285 contains a common internal charge pump used to

enhance the Gate voltage of both FETs.

An external charge capacitor provides access to the charge pump

output. Both external FETs are protected against inductive load

transients by separate internal source-to-gate dynamic clamps. The

power FETs are protected by the 33285 with short-circuit delay time of

800 µs. The device is designed to withstand reverse polarity battery

and load dump transients, encountered in automotive applications.

Features

• PWM Capability

• Power TMOS Number One (OUT1) Short-Circuit Detection and

Short-Circuit Protection

• Voltage Range 7.0 V

≤ 40 V

• Extended Temperature Range from -40

°C ≤ 125°C

• Load Dump Protected

• Overvoltage Detection and Activation of OUT2 During

Overvoltage

• Single Input Control for Both Output Stages

• Capacitor Value of 100 nF Connected to Pin CP

• Analog Input Control Measurement Detection

• OUT1 LOAD Leakage Measurement Detection

• Pb-Free Packaging Designated by Suffix Code EF

Figure 1. 33285 Simplified Application Diagram

HIGH-SIDE TMOS DRIVER

D SUFFIX

EF SUFFIX (PB-FREE)

98ASB42564B

8-PIN SOICN

33285

ORDERING INFORMATION

Device

Temperature

Package

MC33285D/R2

-40°C to 125°C

8 SOICN

MCZ33285EF/R2

SRC

OUT1

OUT2

DRN

GND

33285

IN

CP

VCC

VPWR

Motor

VCC

Input Control