GaAs SP3T 2.5 V High Power Switch

0.1 - 3.0 GHz

MASWSS0100

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product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

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Visit www.macom.com for additional data sheets and product information.

V2

2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

5

0.5 - 1.0 GHz

1.0 - 2.0 GHz

dB

dB

—

—

0.5

0.6

0.65

—

Isolation

0.5 - 1.0 GHz

1.0 - 2.0 GHz

dB

dB

23

—

25

20

—

—

Return Loss

0.5 - 2.5 GHz

dB

—

20

—

P.1dB

—

dBm

—

38

—

2

dBc

—

-80

—

3

dBc

—

-70

-65

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

83

—

Ton, Toff

50% control to 90% RF

50% control to 10% RF

nS

—

94

—

Transients

In Band

mV

—

58

—

Control Current

2.5 V

µA

—

50

80

4. External DC blocking capacitors are required on all RF ports.

5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.

4

V1

V2

V3

RFC–

RF1

RFC-

RF2

RFC -

RF3

1

0

0

On

Off

Off

0

1

0

Off

On

Off

0

0

1

Off

Off

On

6. State 0 = -5 V to +2.5 V, State 1 = -2.5 V to +5 V.

7. Differential voltage, V (state 1) - V (state 0), must be 2.5 V

minimum.

Qualification

Qualified

to

M/A-COM

specification

REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Functional Diagram