PHX8N50E datasheet(4/8 Pages) PHILIPS

4 / 8 page

Philips Semiconductors

Product specification

PowerMOS transistors

PHX8N50E

Avalanche energy rated

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Ths)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

hs = 25 ˚C

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

Fig.5. Typical output characteristics.

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance.

DS(ON) = f(ID); parameter VGS

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

PHX4N60

1ms

Zth j-hs, Transient thermal impedance (K/W)

1us

10us

100us

10ms

100ms

tp, pulse width (s)

0.001

0.01

0.1

D =

single pulse

D = 0.5

0.2

0.05

0.02

0.1

100

120

140

Ths / C

ID%

Normalised Current Derating

120

110

100

with heatsink compound

5.5 V

6 V

6.5 V

7 V

10 V

PHP8N50

VDS, Drain-Source voltage (Volts)

ID, Drain current (Amps)

5 V

VGS = 4.5 V

Tj = 25 C

100

1000

10000

0.01

0.1

100

PHX5N50

VDS, Drain-source voltage (Volts)

ID, Drain current (Amps)

100 us

1 ms

100 ms

tp = 10 us

10 ms

RDS(ON)

VDS/ID

0.5

1.5

PHP8N50

5 V

5.5 V

10 V

ID, Drain current (Amps)

RDS(on), Drain-Source on resistance (Ohms)

4.5 V

VGS = 6 V

Tj = 25 C

6.5 V

7 V

December 1998

Rev 1.300

PHX8N50E Folha de dados(PDF) 4 Page - NXP Semiconductors

PHX8N50E Folha de dados(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL