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CDBS0130 Folha de dados(PDF) 1 Page - Comchip Technology

Nome de Peças CDBS0130
Descrição Electrónicos  SMD Schottky Barrier Diode
PDF  2 Pages
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Fabricante Electrônico  COMCHIP [Comchip Technology]
Página de início  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBS0130 Folha de dados(HTML) 1 Page - Comchip Technology

  CDBS0130 Datasheet HTML 1Page - Comchip Technology CDBS0130 Datasheet HTML 2Page - Comchip Technology  
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Io = 100mA
VR = 30 Volt s
CDBS0130
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
Unit
V
uA
pF
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
I F = 100 mA DC
VR = 30 V
f = 1MHz, and 10 VDC reverse voltage
Symbol
VF
IR
CT
Min Typ
10
Max
0.44
30
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
VRRM
VR
Io
IFSM
PD
TSTG
T j
Min
-40
-40
Max
35
30
100
250
+125
+125
Typ
1000
Unit
V
V
mA
mA
mW
Maximum Rating ( at T A = 25
unless otherwise noted )
C
C
Electrical Characteristics ( at T A = 25
unless otherwise noted )
C
C
C
C
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
SMD Diodes Specialist
COMCHIP
Page 1
REV:A
QW-A1010
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ.
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.008(R0.20)Typ.
Dimensions in inches and (millimeter)
0805 (2012)
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 0.0048 gram (approximately)


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