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MJD122-252 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças MJD122-252
Descrição Electrónicos  Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJD122-252 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  MJD122-252 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJD122-252 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Silicon NPN Power Transistor
MJD122
www.iscsemi.com
1
DESCRIPTION
·
High DC current gain
·
Lead formed for surface mount applications
·
Built-in a damper diode at E-C
·
Complementary Pairs Simplifies Designs
APPLICATIONS
·
Designed for general purpose amplifier
and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICm
Collector Current-Peak
8
A
IB
Base Current-Continuous
120
mA
PC
Collector Power Dissipation
Ta=25℃
20
W
Collector Power Dissipation
TC=25℃
0.16
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃
/W


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