MJD112 datasheet(1/2 Pages) ISC

Nome de Peças	MJD112

Descrição Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD112

www.iscsemi.com

1

DESCRIPTION

·

High DC current gain

·

Lead formed for surface mount applications

·

Built-in a damper diode at E-C

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general purpose amplifier

and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

ICP

Collector Current-Pulse

4

A

IB

Base Current-Continuous

50

mA

PC

Collector Power Dissipation

TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal

Resistance,Junction

to

Case

6.25

℃

/W

Nº de peça semelhante - MJD112

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
KEC(Korea Electronics)	MJD112	394Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications

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MJD112 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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Nº de peça semelhante - MJD112

Descrição semelhante - MJD112

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