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KSH112 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças KSH112
Descrição Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSH112 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  KSH112 Datasheet HTML 1Page - Inchange Semiconductor Company Limited KSH112 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
KSH112
www.iscsemi.com
1
DESCRIPTION
· High DC current gain
· Built-in a damper diode at E-C
· Electrically similar to popular TIP112
· 100% avalanche tested
· Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
4
A
PC
Collector Power Dissipation
Ta=25℃
1.75
W
PC
Collector Power Dissipation
TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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