2SA1225-252 datasheet(2/3 Pages) ISC

Nome de Peças	2SA1225-252

Descrição Electrónicos	Silicon PNP Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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2 / 3 page

Silicon PNP Power Transistor

2SA1225

www.iscsemi.com

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNI

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-1mA,IC=0

-5

V (BR)CEONOTE

Collector-Emitter Breakdown Voltage

IC=-10mA, IB=0

-160

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-1mA ,IE=0

-160

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.5

VBE(on)

Base-Emitter Voltage

VCE=-5V, IC=-0.5A

-1.0

ICBO

Collector Cutoff Current

VCB= -160V; IE= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-0.1

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

240

Transition frequency

VCE=-10V ,IC=-100mA

100

MHz

Cob

Collector output capacitance

VCB=-10V ,IE=0,f=1MHz

NOTE:Pulse test



hFE Classifications

70-140

120-240

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