SN74LVC00ADE4 datasheet(11/39 Pages) TI1

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8 Application and Implementation

Note

Information in the following applications sections is not part of the TI component specification,

and TI does not warrant its accuracy or completeness. TI’s customers are responsible for

determining suitability of components for their purposes, as well as validating and testing their design

implementation to confirm system functionality.

8.1 Application Information

SN74LVC00A is a high-drive CMOS device that can be used for a multitude of buffer-type functions. It can

produce 24 mA of drive current at 3.3 V. Therefore, this device is ideal for driving multiple inputs and for

high-speed applications up to 100 MHz. The inputs and outputs are 5.5-V tolerant allowing the device to allowing

the device to perform mixed-voltage input down translation. For example the A input can be 3.3 V and the B

input can be 5 V, while VCC = 2.5 V and the device will operate properly to output a 2.5 V signal.

8.2 Typical Application

1.65-V to 3.6-V V

Figure 8-1. Typical NAND Gate Application and Supply Voltage

8.2.1 Design Requirements

This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it

can drive currents that would exceed maximum limits. The high drive will also create fast edges into light loads;

therefore, routing and load conditions should be considered to prevent ringing.

8.2.2 Detailed Design Procedure

1. Recommended Input Conditions

• Rise time and fall time specs: See (Δt/ΔV) in the Section 5.4 table.

• Specified high and low levels: See (VIH and VIL) in the Section 5.4 table.

• Inputs are overvoltage tolerant allowing them to go as high as 5.5 V at any valid VCC.

2. Recommended Output Conditions

• Load currents should not exceed 25 mA per output and 50 mA total for the part.

• Outputs should not be pulled above 5.5 V.

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SN54LVC00A, SN74LVC00A

SCAS279S – JANUARY 1993 – REVISED MARCH 2024

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