SL2S3003TTFUD datasheet(72/82 Pages) NXP

72 / 82 page

NXP Semiconductors

SL2S3003/SL2S3003TT

ICODE 3 (TagTamper)

10 Characteristics

10.1 Wafer memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tret

retention time

Tamb ≤ 55 °C

year

Nendu(W)

write endurance

—

100000

cycle

Table 137. Wafer EEPROM characteristics

10.2 Interface characteristics

Typical ratings are not guaranteed. The values listed are at room temperature.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input frequency

[1] 13.553

13.56

13.567

MHz

Vi(RMS)min

minimum RMS input voltage

operating read/

write

1.1

1.3

Pi(min)

minimum input power

operating

[2] -

μW

center input capacitance

between LA

and LB

[3] 22.3

23.5

24.7

Cadjust

adjust input capacitance

between LA

and LB

[3] -

± 1.5

tpersist

persistent time

Tamb ≤ 55 ° C

[4] 2

Ron

resistance tag taper closed (for SL2S3003TT

only)

between DP

and GND

Roff

resistance tag taper open (for SL2S3003TT

only)

between DP

and GND

1 M

Table 138. Interface characteristics

1. Bandwidth limitation (± 7 kHz) according to ISM band regulations.

2. Including losses in the resonant capacitor and rectifier.

3. Measured with an HP4285A LCR meter at 13.56 MHz and 1.1 V RMS.

4. The maximum persistent time strongly depends on the ambient temperature.

SL2S3003/SL2S3003TT

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3.0 — 28 March 2024

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