| Os motores de busca de Datasheet de Componentes eletrônicos |
|
2SC5459 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC5459 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() Silicon NPN Power Transistor 2SC5459 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) · DC Current Gain- : hFE= 13(Min)@ IC= 1mA · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous 1 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5 ℃ /W 12 3 |
Nº de peça semelhante - 2SC5459 |
|
Descrição semelhante - 2SC5459 |
|
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |