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IRG4PC50FD Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRG4PC50FD Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2056 eq IRG4PC50FD N-Channel IGBT www.iscsemi.com 1 DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.6V@IC= 39A · High Current Capability · High Input Impedance · Low Conduction Loss APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 70 A IC Collector Current-Continuous @ TC=100℃ 39 A ICM Pulsed Collector Current 280 A PD Power Dissipation @TC=25℃ 200 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case IGBT 0.64 ℃ /W Diode 0.83 |
Nº de peça semelhante - IRG4PC50FD |
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Descrição semelhante - IRG4PC50FD |
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