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2DB1182Q Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2DB1182Q
Descrição Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
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2DB1182Q Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon PNP Power Transistor
2DB1182Q
DESCRIPTION
·
Low saturation voltage
·
High reliability
·
High Continuous Collector Current
APPLICATIONS
·
Power Switching or Amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
104
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
PD
Power Dissipation @TC=25℃
1.2
W
TJ
Max.Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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