6 Specifications

6.1 Absolute Maximum Ratings

Note

The values defined in the Absolute Maximum Ratings table were taken from the integrated LPDDR4

SDRAM datasheet. For additional absolute maximum rating details associated with the integrated

LPDDR4 SDRAM, see the Integrated Silicon Solution (ISSI®) IS43/46LQ16256B Datasheet

over operating junction temperature range (unless otherwise noted)(1) (2)

PARAMETER

MIN

MAX UNIT

VDDS_MEM_1P1

SDRAM IO supply

–0.4

1.5

V

VDDS_MEM_1P8

SDRAM Core supply

–0.4

2.1

V

TSTG

Storage temperature

–55

150

℃

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Section 6.3, Recommended Operating

Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be

fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

All voltage values are with respect to VSS, unless otherwise noted.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

(ESD)

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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AM625SIP

SPRSP98 – NOVEMBER 2023

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