IRFS4610PBF datasheet(4/11 Pages) IRF

Nome de Peças	IRFS4610PBF

Descrição Electrónicos	HEXFET Power MOSFET

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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IRF/B/S/SL4610PbF

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

TJ = 25°C

TJ = 175°C

VGS = 0V

100

125

150

175

TJ , Junction Temperature (°C)

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

100

105

110

115

120

125

100

VDS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

100

125

150

175

Starting TJ, Junction Temperature (°C)

400

800

1200

1600

I D

TOP

4.6A

6.3A

BOTTOM

44A

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

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