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GAP3SLT33 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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GAP3SLT33 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Barrier Rectifier GAP3SLT33 www.iscsemi.com 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply ·Low Voltage High Frequency Invers Circuit ·Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS Peak Repetitive Reverse Voltage RMS Voltage 3300 V IF Continuous forward current 0.3 A IF(RMS) RMS forward current 0.35 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 2 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.69 ℃ /W |
Nº de peça semelhante - GAP3SLT33 |
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Descrição semelhante - GAP3SLT33 |
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