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2N5303 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5303 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Silicon NPN Power Transistor 2N5303 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 80 - V ICEO Collector Cutoff Current VCE= 80V; IB= 0 - 5.0 mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 - 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 - 5.0 mA VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A - 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A - 1.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 20A; IB= 4A - 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A - 1.7 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 15A; IB= 1.5A - 2.0 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 20A; IB= 4A - 2.5 V VBE(on)-1 Base-Emitter On Voltage IC= 10A; VCE= 2V - 1.5 V VBE(on)-2 Base-Emitter On Voltage IC= 20A; VCE= 4V - 2.5 V hFE-1 DC Current Gain IC= 1A; VCE= 2V 40 - hFE-2 DC Current Gain IC= 10A; VCE= 2V 15 90 hFE-3 DC Current Gain IC= 20A; VCE= 4V 5 - |
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