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AM29PDL128G Folha de dados(PDF) 33 Page - Advanced Micro Devices

Nome de Peças AM29PDL128G
Descrição Electrónicos  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
PDF  71 Pages
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDL128G Folha de dados(HTML) 33 Page - Advanced Micro Devices

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Am29PDL128G
October 28, 2004
P R E L IM IN A R Y
Table 11.
System Interface String
Addresses
(Double Word
Mode)
Addresses
(Word Mode)
Data
Description
1Bh
36h
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N ms
22h
44h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N times typical
24h
48h
0000h
Max. timeout for buffer write 2
N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)



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