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AM29LV128ML103REF Folha de dados(PDF) 59 Page - Advanced Micro Devices

Nome de Peças AM29LV128ML103REF
Descrição Electrónicos  128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  66 Pages
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV128ML103REF Folha de dados(HTML) 59 Page - Advanced Micro Devices

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January 31, 2007 25270C7
Am29LV128MH/L
59
D A TA
SH EET
AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#,
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0A0 for program
5555 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
3030 for sector erase
1010 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
DQ15
tPOLL
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 26.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings



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