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M41000000G Folha de dados(PDF) 59 Page - Advanced Micro Devices

Nome de Peças M41000000G
Descrição Electrónicos  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  63 Pages
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

M41000000G Folha de dados(HTML) 59 Page - Advanced Micro Devices

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Am41DL6408G
August 19, 2002
P R E L I M INARY
AC CHARACTERISTICS
Notes:
1. UB#s and LB#s controlled, CIOs must be high.
2. t
CW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1s and low WE#. A write begins when CE1#s goes low and WE# goes low
when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation.
A write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
Figure 32.
SRAM Write Cycle—UB#s and LB#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
tWC
CE1#s
CE2s
tAW
tBW
tDW
tDH
tWR (See Note 3)
tAS
(See Note 4)
tCW
(See Note 2)
tCW (See Note 2)
tWP
(See Note 5)



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