2SA1015 datasheet(2/4 Pages) UMW

Nome de Peças	2SA1015

Descrição Electrónicos	SOT-23 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Página de início	https://www.umw-ic.com/

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2 / 4 page

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol Test Condition

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-50

Collector-emitter breakdown voltage

V(BR)CEO

IC= -0.1mA, IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

Collector cut-off current

ICBO

VCB=-50 V , IE=0

-0.1

μA

Collector cut-off current

ICEO

VCB=-50V , IE=0

-1

μA

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

μA

DC current gain

hFE

VCE=-6V, IC= -2mA

130

400

hFE

VCE=-6V, IC= -0.2mA

Collector-emitter saturation voltage

VCE(sat) IC=-100 mA, IB= -10mA

-0.3

Base-emitter saturation voltage

VBE(sat) IC=-100 mA, IB= -10mA

-1.1

Transition frequency

VCE=-10V, IC= -1mA

f=30MHz

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE= 0

f=1MHz

Noise Figure

VCE=-6V, IC= -0.1mA

Rg=10kΩ; f=1kHz

CLASSIFICATION OF hFE

Rank

Range

130-200

200-400

SOT-23 Plastic-Encapsulate Transistors

UMW

UMW 2SA1015

www.umw-ic.com

友台半导体有限公司

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