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ISG2018 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISG2018 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() ISG2018 eq STGP30M65DF2 Trench gate Field-Stop IGBT www.iscsemi.com 2023-10-09 1 DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=30A · High Current Capability · High Input Impedance · Fast Switching APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 60 A IC Collector Current-Continuous @ TC=100℃ 30 A ICM Pulsed Collector Current@ TC=25℃ 120 A IF Diode Forward Current @ TC=25℃ 60 A IF Diode Forward Current @ TC=100℃ 30 A IFM Pulsed forward current 120 A PD Power Dissipation , @ TC=25℃ 258 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Nº de peça semelhante - ISG2018 |
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Descrição semelhante - ISG2018 |
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