9

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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

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For information regarding Intersil Corporation and its products, see www.intersil.com

FN2898.4

November 19, 2004

Die Characteristics

DIE DIMENSIONS:

80 mils x 90 mils x 19 mils

2020

μm x 2280μm x 483μm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16k

PASSIVATION:

Silox Thickness: 12k

Nitride Thickness: 3.5k

SUBSTRATE POTENTIAL (Powered Up):

V-

TRANSISTOR COUNT:

41

PROCESS:

Bipolar Dielectric Isolation

Metallization Mask Layout

HA-2541

+IN

V-

NC

OUTPUT

V+

BAL

-IN

BAL

HA-2541