CEB20N06 datasheet(1/4 Pages) CET

Nome de Peças	CEB20N06

Descrição Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrônico	CET [Chino-Excel Technology]

Página de início	http://www.cetsemi.com

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 25A, RDS(ON) =55mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

60

0.56

83

70

25

±20

V

W

A

V

W/ C

4 - 58

S

G

D

G

S

D

G

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

RDS(ON) =75mΩ @VGS = 4.5V.

CEP20N06/CEB20N06

Lead free product is acquired.

2004.June

http://www.cetsemi.com

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

1.8

R

θJC

R

θJA

Nº de peça semelhante - CEB20N06

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Chino-Excel Technology	CEB20N06	417Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

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CEB20N06 Folha de dados(PDF) 1 Page - Chino-Excel Technology

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