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ISF1035 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISF1035
Descrição Electrónicos  N-Channel MOSFET Transistor
PDF  4 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1035 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISF1035
eq FDPF18N50T
N-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
·
Drain Current –ID=18A@ TC=25℃
·
Drain Source Voltage- VDSS=500V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.265Ω(Max)@VGS= 10V
APPLICATIONS
·
Switch Mode Power Supply (SMPS)
·
Uninterruptible Power Supply (UPS)
·
Power Factor Correction (PFC)
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
18
A
IDM
Drain Current-Single Pluse
72
A
EAS
Single Pulse Avalanche Energy (note2)
945
mJ
IAS
Avalanche Current
(note1)
18
A
PD
Total Dissipation @TC=25℃
38.5
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
Notes
1.Repetitive rating:Pulse width limited by maximum junction temperature
2.L= 5.2mH,VDD= 50V,Rg=25Ω,Starting TJ=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.3
℃
/W


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