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BYW56 Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYW56
Descrição Electrónicos  Controlled avalanche rectifiers
PDF  7 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYW56 Folha de dados(HTML) 2 Page - NXP Semiconductors

  BYW56 Datasheet HTML 1Page - NXP Semiconductors BYW56 Datasheet HTML 2Page - NXP Semiconductors BYW56 Datasheet HTML 3Page - NXP Semiconductors BYW56 Datasheet HTML 4Page - NXP Semiconductors BYW56 Datasheet HTML 5Page - NXP Semiconductors BYW56 Datasheet HTML 6Page - NXP Semiconductors BYW56 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Oct 03
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page (Datasheet)
MAM047
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Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
VRWM
crest working reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
VR
continuous reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
IF(AV)
average forward current
Ttp =45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
2.0
A
Tamb =80 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
−
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
−
50
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
−
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.5
−65
+175
°C



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