Philips Semiconductors

Product specification

Dual rectifier diodes

BYV74F series

ultrafast

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• High thermal cycling performance

• Isolated mounting tab

I

t

GENERAL DESCRIPTION

PINNING

SOT199

Dual, common cathode, ultra-fast,

PIN

DESCRIPTION

epitaxial rectifier diodes intended

for use as output rectifiers in high

1

anode 1

frequency switched mode power

supplies.

2

cathode

The BYV74F series is supplied in

3

anode 2

the conventional leaded SOT199

package.

tab

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV74F

-300

-400

-500

V

RRM

Peak repetitive reverse voltage

-

300

400

500

V

V

RWM

Crest working reverse voltage

-

300

400

500

V

V

R

Continuous reverse voltage

T

-

300

400

500

V

I

O(AV)

Average rectified output current square wave;

δ = 0.5;

-

20

A

(both diodes conducting)

1

T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode.

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RRM(max)

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

k

a1

a2

13

2

12

3

case

1 Neglecting switching and reverse current losses.

September 1998

1

Rev 1.300