BYD77D datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Nov 15

Philips Semiconductors

Product speciﬁcation

Ultra fast low-loss

controlled avalanche rectiﬁers

BYD77 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Ttp = 105 °C; see Figs 6 and 7

BYD77A to D

−

BYD77E to G

−

IFRM

repetitive peak forward current

Tamb =60 °C; see Figs 8 and 9

BYD77A to D

−

8.5

BYD77E to G

−

8.0

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave; Tj =Tj max

prior to surge; VR =VRRMmax

−

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =25 °C prior to

surge; inductive load switched off

−

Tstg

storage temperature

−65

+175

°C

junction temperature

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max;

see Figs 12 and 13

BYD77A to D

−−

0.75

BYD77E to G

−−

0.83

forward voltage

IF =1A;

see Figs 12 and 13

BYD77A to D

−−

0.98

BYD77E to G

−−

1.05

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYD77A

−−

BYD77B

110

−−

BYD77C

165

−−

BYD77D

220

−−

BYD77E

275

−−

BYD77F

330

−−

BYD77G

440

−−

reverse current

VR =VRRMmax;

see Fig.14

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.14

−−

100

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25 A;

see Fig.18

BYD77A to D

−−

BYD77E to G

−−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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