BYD53G datasheet(3/12 Pages) PHILIPS

3 / 12 page

1998 Dec 04

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery controlled

avalanche rectiﬁers

BYD53 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Tamb =65 °C; see Figs 8 and 9

BYD53D to M

−

3.6

BYD53U and V

−

4.45

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to

surge; inductive load switched off

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see Fig.12

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max;

see Figs 13 and 14

BYD53D to M

−−

2.1

BYD53U and V

−−

1.7

forward voltage

IF = 1 A; see Figs 13 and 14

BYD53D to M

−−

3.6

BYD53U and V

−−

2.3

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

BYD53D

300

−−

BYD53G

500

−−

BYD53J

700

−−

BYD53K

900

−−

BYD53M

1100

−−

BYD53U

1300

−−

BYD53V

1500

−−

reverse current

VR =VRRMmax; see Fig.15

−−

µA

VR =VRRMmax; Tj = 165 °C;

see Fig.15

−−

100

µA

trr

reverse recovery time

when switched from IF = 0.5 A

to IR = 1 A; measured at

IR = 0.25 A; see Fig.18

BYD53D to J

−−

BYD53K and M

−−

BYD53U and V

−−

150

diode capacitance

f = 1 MHz; VR = 0; see Fig.16

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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