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S4DNFS30 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças S4DNFS30
Descrição Electrónicos  N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

S4DNFS30 Folha de dados(HTML) 3 Page - STMicroelectronics

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STS4DNFS30
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Mosfet absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
4.5
A
ID
Drain current (continuous) at TC = 100°C
3.2
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
13
A
PTOT
Total dissipation at TC = 25°C
2
W
Table 2.
Schottky absolute maximum ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS) RMS forward current
10
A
IF(AV)
Average forward current
TL=125°C
δ=0.5
4A
IFSM
Surge non repetitive forward current
tp=10ms
Sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp=2µs
F=1kHz
1A
IRSM
Non repetitive peak reverse current
tp=100µs
1
A
dv/dt
Critical rate of rise of reverse voltage
10000
v/µs
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-amb Thermal resistance junction-amb Mosfet (1)
1.
Mounted on FR-4 board (steady state)
62.5
°C/W
Tstg
Storage temperature range Max
-55 to 150
°C
Tj
Junction temperature
-55 to 150
°C



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