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BUT12 Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BUT12 Folha de dados(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A Fig.4 Forward bias SOAR. Tmb <25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. andbook, full pagewidth MGB945 10 1 102 103 1000 400 104 VCE (V) VCE (V) 10 10−1 102 10−2 10−2 10−3 IC (A) IC (A) δ = 0.01 1 ms 2 ms 5 ms 10 ms 20 ms DC 100 µs 200 µs 500 µs tp = 20 µs 50 µs III III IV I II (2) (1) IC max ICM max BUT12 BUT12A BUT12 BUT12A |
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