2SD669A-D-AB3-R datasheet(3/5 Pages) UTC

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2SD669/A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R204-005,E

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

180

2SD669

120

Collector-Emitter Voltage

2SD669A

VCEO

160

Emitter-Base Voltage

VEBO

Collector Current

1.5

Collector Peak Current

lC(PEAK)

Collector Power Dissipation

SOT-223

0.5

Collector Power Dissipation

TO-126

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector to Base Breakdown Voltage

BVCBO

IC=1mA, IE=0

180

2SD669

120

Collector to Emitter Breakdown

Voltage

2SD669A

BVCEO

IC=10mA, RBE=∞

160

Emitter to Base Breakdown Voltage

BVEBO

IE=1mA, IC=0

Collector Cut-off Current

ICBO

VCB=160V, IE=0

µA

hFE1

VCE=5V, IC=150mA (Note)

320

DC Current Gain

hFE2

VCE=5V, IC=500mA (Note)

Collector-Emitter Saturation Voltage

VCE(SAT) IC=600mA, IB=50mA (Note)

Base-Emitter Voltage

VBE

VCE=5V, IC=150mA (Note)

1.5

Current Gain Bandwidth Product

VCE=5V, IC=150mA (Note)

140

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

Note: Pulse test.

CLASSIFICATION OF hFE1

RANK

RANGE

60-120

100-200

160-320

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