2SD1616A-Y-AB3-R datasheet(2/4 Pages) UTC

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2SD1616/A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-008,C

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

2SD1616

Collector to Base Voltage

2SD1616A

VCBO

120

2SD1616

Collector to Emitter Voltage

2SD1616A

VCEO

Emitter to Base Voltage

VEBO

Collector Current

Pulse(Note2)

ICM

Total Power Dissipation

750

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width

≤10ms, Duty cycle<50%

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Saturation Voltage

VCE (SAT)

IC=1A, IB=50mA

0.15

0.3

Base-Emitter Saturation Voltage

VBE (SAT)

IC=1A, IB=50mA

0.9

1.2

Base Emitter On Voltage

VBE (ON)

VCE =2V, IC =50mA

600

640

700

Collector Cut-Off Current

ICBO

VCB=60V

100

Emitter Cut-Off Current

IEBO

VEB= 6V

100

2SD1616

135

600

hFE1

VCE =2V, IC =100mA

2SD1616A

135

400

DC Current Gain

hFE2

VCE =2V, IC=1A

Transition Frequency

VCE =2V, IC =100mA

100

160

MHz

Output Capacitance

Cob

VCB =10V, f =1MHz

Turn On Time

tON

VCE =10V, IC =100mA

0.07

μs

Storage Time

tSTG

IB1 = -IB2 =10mA

0.95

μs

Fall Time

VBE(OFF) = -2 ~ -3V

0.07

μs

CLASSIFICATION OF hFE1

RANK

hFE1

135 ~ 270

200 ~ 400

300 ~ 600

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