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BAV99-AL3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças BAV99-AL3-R
Descrição Electrónicos  HIGH CONDUCTANCE ULTRA FAST DIODE
PDF  4 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BAV99-AL3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

  BAV99-AL3-R Datasheet HTML 1Page - Unisonic Technologies BAV99-AL3-R Datasheet HTML 2Page - Unisonic Technologies BAV99-AL3-R Datasheet HTML 3Page - Unisonic Technologies BAV99-AL3-R Datasheet HTML 4Page - Unisonic Technologies  
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BAV99
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R601-005,B
ABSOLUTE MAXIMUM RATINGS* (Ta = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Working Inverse Voltage
WIV
70
V
Average Rectified Current
IF(AV)
200
mA
DC Forward Current
IFM
600
mA
Recurrent Peak Forward Current
IFRM
700
mA
Pulse width = 1.0 second
1.0
Non-repetitive Peak
Forward Surge Current
Pulse width = 1.0 microsecond
IFSM
2.0
A
SOT-23
350
mW
Total Device Dissipation
SOT-363
PD
200
mW
Junction Temperature
TJ
+125
℃
Storage Temperature
TSTG
-40 ~ +150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note: 1. These ratings are based on a maximum junction temperature of 150°C
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
357
℃
/W
Thermal Resistance Junction to Ambient
SOT-363
θJA
625
℃
/W
ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Breakdown Voltage
VR
IR = 100µA
70
V
IF = 1.0mA
715
mV
IF = 10mA
855
mV
IF = 50mA
1.0
V
Maximum Instantaneous Forward
Voltage
VFM
IF = 150mA
1.25
V
Peak Forward Voltage
VSM
IF = 10mA, tR = 20nS
1.75
V
Maximum Instantaneous Reverse
Current
IRM
VR = 70V
VR = 25V, Ta = 150°C
VR = 70V, Ta = 150°C
2.5
30
50
µA
Diode Capacitance
CO
VR = 0, f = 1.0MHz
1.5
pF
Reverse Recovery Time
tRR
IF = IR = 10mA, IRR = 1.0mA
RL = 100Ω
6.0
ns



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